Leakage Current and Low-Frequency Noise Analysis and Reduction in a Suspended SOI Lateral p-i-n Diode Article

Li, Guoli, Kilchytska, Valeriya, Andre, Nicolas et al. (2017). Leakage Current and Low-Frequency Noise Analysis and Reduction in a Suspended SOI Lateral p-i-n Diode . IEEE TRANSACTIONS ON ELECTRON DEVICES, 64(10), 4252-4259. 10.1109/TED.2017.2742863

International Collaboration

cited authors

  • Li, Guoli; Kilchytska, Valeriya; Andre, Nicolas; Francis, Laurent A; Zeng, Yun; Flandre, Denis

sustainable development goals

authors

publication date

  • October 1, 2017

published in

keywords

  • 1/F NOISE
  • Annealing
  • DESIGN
  • DEVICES
  • Engineering
  • Engineering, Electrical & Electronic
  • FILM
  • GAS SENSORS
  • LIFETIME
  • P+P-N+ (p-i-n) diode
  • PIN PHOTODIODES
  • Physical Sciences
  • Physics
  • Physics, Applied
  • SILICON
  • Science & Technology
  • TEMPERATURES
  • Technology
  • characterization
  • dark leakage current
  • interface traps
  • low-frequency noise (LFN)
  • silicon on insulator (SOI)
  • simulation

Digital Object Identifier (DOI)

publisher

  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

start page

  • 4252

end page

  • 4259

volume

  • 64

issue

  • 10