Breakdown-speed considerations in InP/InGaAs single- and double-heterostructure bipolar transistors Article

Chau, H-F, Pavlidis, D, Hu, J et al. (1993). Breakdown-speed considerations in InP/InGaAs single- and double-heterostructure bipolar transistors . IEEE TRANSACTIONS ON ELECTRON DEVICES, 40(1), 2-8. 10.1109/16.249416

cited authors

  • Chau, H-F; Pavlidis, D; Hu, J; Tomizawa, K

authors

publication date

  • January 1, 1993

published in

keywords

  • 40 Engineering
  • 4018 Nanotechnology

Digital Object Identifier (DOI)

publisher

  • Institute of Electrical and Electronics Engineers (IEEE)

start page

  • 2

end page

  • 8

volume

  • 40

issue

  • 1