In0.52A10.48As/InxGa1-xAs (0.53 ≤ x ≤ 0.70) lattice-matched and strained heterostructure insulated-gate FET’s Article

Chan, YJ, Pavlidis, D. (1991). In0.52A10.48As/InxGa1-xAs (0.53 ≤ x ≤ 0.70) lattice-matched and strained heterostructure insulated-gate FET’s . IEEE TRANSACTIONS ON ELECTRON DEVICES, 38(9), 1999-2005. 10.1109/16.83721

cited authors

  • Chan, YJ; Pavlidis, D

authors

abstract

  • The dc and microwave properties of In0.52A10.48As/InxGa1-xAs (0.53 ≤ x ≤ 0.70) HIGFET’s with a quantum well channel design are presented. DC and microwave transconductances (gm) are enhanced as the In content is increased in the InGaAs channel. An intrinsic microwave gm value of 428 mS/mm and a K-factor of 1140 mS/mm • V have been obtained for 1.0-μm gate length with the 65% In channel devices. The sheet charge density, drift mobility, transconductance, current-gain cutoff frequency (fT), and maximum oscillation frequency (ƒmax) all show a continuous improvement up to 65% In content (fT = 22.5 GHz with 53% and ƒϒ= 27 GHz with 65% In: the corresponding fmax change is from 6.5 to 8 GHz). The device performance degrades as the In content is increased to 70%. DC and microwave characteristics show the presence of Negative Differential Resistance (NDR) up to 2.7 GHz. © 1991 IEEE

publication date

  • January 1, 1991

published in

Digital Object Identifier (DOI)

start page

  • 1999

end page

  • 2005

volume

  • 38

issue

  • 9