Monolithically Integrated InP-Based Front-End Photoreceivers Article

Zebda, Y, Bhattacharya, P, Pavlidis, D et al. (1991). Monolithically Integrated InP-Based Front-End Photoreceivers . IEEE TRANSACTIONS ON ELECTRON DEVICES, 38(6), 1324-1333. 10.1109/16.81623

cited authors

  • Zebda, Y; Bhattacharya, P; Pavlidis, D; Brock, TL


  • The performance characteristics of a monolithically integrated front-end photoreceivers, consisting of a photodiode and a MODFET amplifier, have been analyzed and measured. A vertical scheme of integration was initially used to realize a photoreceiver circuit on InP consisting of a InGaAs p-i-n diode, an InGaAs/InAlAs pseudomorphic MODFET, and passive circuit elements. The device structures were grown by single-step molecular beam expitaxy with an isolating layer in between. The microwave performance of l-μm gate MOD-FET’s in the circuit is characterized by fT = 9 GHz, although identical discrete devices have fT= 30–35 GHz. The degradation is due to additional parasitic capacitances present in this scheme of integration. In spite of this disadvantage the bandwidth of the circuit is 2.1 GHz. Integration of the p-i-n diode with 1.0- and 0.25-μm gate MODFET’s has also been done in a planar scheme, using regrowth, and receiver bandwidths of 6.5 GHz are measured. This value is comparable to hybrid circuits with InP-based devices. © 1991 IEEE

publication date

  • January 1, 1991

published in

Digital Object Identifier (DOI)

start page

  • 1324

end page

  • 1333


  • 38


  • 6