DC and high-frequency characteristics of GaN-based IMPATTs Article

Panda, AK, Pavlidis, D, Alekseev, E. (2001). DC and high-frequency characteristics of GaN-based IMPATTs . IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(4), 820-822. 10.1109/16.915735

cited authors

  • Panda, AK; Pavlidis, D; Alekseev, E

authors

abstract

  • The dynamic characteristics of Wurtzite (Wz) phase and zinc-blende (Znb) phase GaN IMPATTs are reported at D-band and compared with Si and GaAs-based IMPATT devices at the same operating conditions and frequency of operations. It is shown that GaN-based IMPATTs are potential candidates for replacing traditional IMPATTs at high frequency of operation.

publication date

  • April 1, 2001

published in

Digital Object Identifier (DOI)

start page

  • 820

end page

  • 822

volume

  • 48

issue

  • 4