An Investigation of the Power Characteristics and Saturation Mechanisms in HEMT’s and MESFET’s Article

Weiss, MR, Pavlidis, D. (1988). An Investigation of the Power Characteristics and Saturation Mechanisms in HEMT’s and MESFET’s . IEEE TRANSACTIONS ON ELECTRON DEVICES, 35(8), 1197-1206. 10.1109/16.2538

cited authors

  • Weiss, MR; Pavlidis, D

authors

abstract

  • A new method for large-signal transistor analysis is presented, which is based on the harmonic-balance approach, but is able to use: 1) input data from measured S-parameters instead of dc or pulsed dc characteristics and 2) a large-signal equivalent circuit with harmonic elements.” The topology of this circuit is nearly identical to commonly used small-signal equivalent circuits; its application enables a detailed interpretation of the computed results, which are very precise due to the use of small-signal S-parameters. The large-signal model is applied to HEMT’s and MESFET’s; the saturation mechanisms of both types of transistors are investigated with the model, and the operation difference are discussed. The importance of including higher harmonic signal components in the large-signal analysis is also shown. © 1988 IEEE

publication date

  • January 1, 1988

published in

Digital Object Identifier (DOI)

start page

  • 1197

end page

  • 1206

volume

  • 35

issue

  • 8