Enhanced Ultraviolet Avalanche Photodiode With 640-nm-Thin Silicon Body Based on SOI Technology Conference

Alirezaei, Iman Sabri, Andre, Nicolas, Flandre, Denis. (2020). Enhanced Ultraviolet Avalanche Photodiode With 640-nm-Thin Silicon Body Based on SOI Technology . IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(11), 4641-4644. 10.1109/TED.2020.3017699

Open Access

cited authors

  • Alirezaei, Iman Sabri; Andre, Nicolas; Flandre, Denis

authors

date/time interval

  • September 14, 2020 -

publication date

  • November 1, 2020

published in

keywords

  • Avalanche photodiode (APD)
  • Engineering
  • Engineering, Electrical & Electronic
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Science & Technology
  • Technology
  • low-light level
  • silicon-on-insulator (SOI) CMOS technology
  • ultraviolet (UV)-APD

Location

  • FRANCE, Grenoble

Digital Object Identifier (DOI)

Conference

  • 50th European Solid-State Device Research Conference (ESSDERC) / 46th European Solid-State Circuits Conference (ESSCIRC)

publisher

  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

start page

  • 4641

end page

  • 4644

volume

  • 67

issue

  • 11