Photoluminescence characteristics of GaN layers grown on SOI substrates and relation to material properties
Conference
Philippe, A, Bru-Chevallier, C, Guillot, G et al. (1997). Photoluminescence characteristics of GaN layers grown on SOI substrates and relation to material properties
. 482 307-312. 10.1557/proc-482-307
Philippe, A, Bru-Chevallier, C, Guillot, G et al. (1997). Photoluminescence characteristics of GaN layers grown on SOI substrates and relation to material properties
. 482 307-312. 10.1557/proc-482-307
GaN layers were grown by MOCVD on Silicon on Insulator (SOI) substrates in an effort to improve the material quality compared to more traditionally employed sapphire substrates. Their photoluminescence properties are reported and found to exhibit an intense and relatively large PL band around 3.47 eV at low temperature (7K). This is about 10 meV lower than the PL energy of samples grown on sapphire substrates and suggests the presence of lower strain in the layers which is expected for compliant growth on SOI substrates. The shape of the main PL peak appears to indicate that Silicon diffusion takes place from the substrate during growth. The behavior of the PL spectra is studied as a function of temperature. The GaN films show good overall electrical properties with Hall mobilities at room temperature in the range of 150 to 300 cm2/Vs and background carrier concentration from 2.9 to 3.9×1019 cm-3. The promising optical and electronic features of these layers could be of great interest for the development of high quality optical and electronic devices.
