Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy
Conference
Park, JW, Pavlidis, D, Mohammadi, S et al. (1997). Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy
. 439-442. 10.1109/ISCS.1998.711687
Park, JW, Pavlidis, D, Mohammadi, S et al. (1997). Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy
. 439-442. 10.1109/ISCS.1998.711687
A new emitter design based on composite AlGaAs/GaInP approach is described which allows significant reduction of CBE and improved high frequency performance. Self-aligned composite AlGaAs/GaInP and traditional emitter design HBTs were fabricated on CBE layers grown with TBA/TBP precursors. CBE of composite emitter HBTs is significantly lower than for traditional designs and does not show significant variation with collector current. This leads to enhanced fτ characteristics for composite emitter HBT designs and confirms the theoretical expectations. The CBE achieved with the new designs was by at least 4 times lower than that of conventional transistors and resulted in 20% enhancement of cutoff frequency.
