Iron-doped InAlAs layers were grown by metallorganic chemical vapor deposition in order to improve the electrical properties of the material. Photoreflectance studies clearly showed the increase of deep traps by introducing iron into the layers. Platinum-Schottky diodes were fabricated on undoped and iron-doped InAlAs with various iron concentrations and device parameters were extracted to reveal the impact of iron concentration on the electrical properties. Appropriate levels of iron doping improved the electrical properties of InAlAs, although the material started presenting less-pronounced semi-insulating characteristics beyond certain levels of ferrocene flow. Increased presence of traps with high activation energy resulted in iron doping.
