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Recent advances in III-V nitride electronic devices
Conference
Pavlidis, D. (2004). Recent advances in III-V nitride electronic devices .
795-798.
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Pavlidis, D. (2004). Recent advances in III-V nitride electronic devices .
795-798.
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cited authors
Pavlidis, D
authors
Pavlidis, Dimitrios
abstract
The latest developments made using III-V Nitride technology for microwave and mm-wave applications are reviewed. Design, processing issues are addressed and device, circuit performance is reported. The devices discussed are AlGaN/GaN-based HEMTs, MISFETs, HBTs. Circuit types reviewed include power and low-noise amplifiers. Nitride technology is also investigated for mixer and switch applications. © 2004 IEEE.
publication date
December 1, 2004
Additional Document Info
start page
795
end page
798