Recent advances in III-V nitride electronic devices Conference

Pavlidis, D. (2004). Recent advances in III-V nitride electronic devices . Technical Digest - International Electron Devices Meeting, 795-798.

cited authors

  • Pavlidis, D

abstract

  • The latest developments made using III-V Nitride technology for microwave and mm-wave applications are reviewed. Design, processing issues are addressed and device, circuit performance is reported. The devices discussed are AlGaN/GaN-based HEMTs, MISFETs, HBTs. Circuit types reviewed include power and low-noise amplifiers. Nitride technology is also investigated for mixer and switch applications. © 2004 IEEE.

authors

publication date

  • December 1, 2004

published in

start page

  • 795

end page

  • 798