Low-power consumption InGaAs PIN diode switches for V-band applications Article

Ziegler, V, Berg, M, Tobler, H et al. (1999). Low-power consumption InGaAs PIN diode switches for V-band applications . JAPANESE JOURNAL OF APPLIED PHYSICS, 38(2 B), 1208-1210. 10.1143/jjap.38.1208

cited authors

  • Ziegler, V; Berg, M; Tobler, H; Woelk, C; Deufel, R; Trasser, A; Schumacher, H; Alekseev, E; Pavlidis, D; Dickmann, J

authors

abstract

  • In this paper, we present the measurement results of two InP-based coplanar SPST (single pole single throw) PIN diode switches operating at V-band frequencies. The switches show excellent mm-wave performance combined with a very low DC-power consumption. The SPST with on-chip biasing and DC-blocking capacitors demonstrates an insertion loss as low as 0.84 dB and a high isolation value of 21.8 dB at a center frequency of 53 GHz with only 0.8 mW of DC-power consumption. A more simple SPST exhibits under equivalent conditions (0.9 mW) an excellent insertion loss of 0.52 dB and an isolation of 21.7 dB. Furthermore the power-handling capability of the InGaAs PIN diodes, which are used as active switching elements, is investigated in this paper and found to exceed 25 dBm at a reverse voltage of -5 V. © 1999 Publication Board, Japanese Journal of Applied Physics.

publication date

  • January 1, 1999

published in

Digital Object Identifier (DOI)

start page

  • 1208

end page

  • 1210

volume

  • 38

issue

  • 2 B