JAPANESE JOURNAL OF APPLIED PHYSICS

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JAPANESE JOURNAL OF APPLIED PHYSICS Journal

publication venue for

Microstructure and electrical property of tantalum oxynitride thin films prepared using high-power impulse reactive magnetron sputtering. 59:116502. 2020
Yellow luminescence centers of GaN. 43:2471-2472. 2004
Low-power consumption InGaAs PIN diode switches for V-band applications. 38:1208-1210. 1999
New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials. 38:992-995. 1999
ELECTRICAL-PROPERTIES OF PARAELECTRIC (PB0.72LA0.28)TIO3 THIN-FILMS WITH HIGH LINEAR DIELECTRIC PERMITTIVITY - SCHOTTKY AND OHMIC CONTACTS. 34:3142-3152. 1995
DC DISCHARGE ENHANCEMENT OF CHEMICAL ACTIVITY IN LASER-PRODUCED PLASMA. 33:1018-1022. 1994
DC and high frequency characterization of metalorganic chemical vapor deposition (MOCVD) grown InP/InGaAs PNP heterojunction bipolar transistor 2002
Technology and first electrical characteristics of complementary NPN and PNP InAlAs/InGaAs heterojunction bipolar transistors 2002

category

PHYSICS, APPLIED Category

International Standard Serial Number (ISSN)

0021-4922