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JAPANESE JOURNAL OF APPLIED PHYSICS
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Overview
publication venue for
Microstructure and electrical property of tantalum oxynitride thin films prepared using high-power impulse reactive magnetron sputtering
. 59:116502.
2020
Yellow luminescence centers of GaN
. 43:2471-2472.
2004
Boron-doped diamond film homoepitaxially grown on high-quality chemical-vapor-deposited diamond (100)
. 40:4145-4148.
2001
High-quality homoepitaxial diamond films grown at normal deposition rates
. 40:L212-L214.
2001
Chemical-vapor-deposited diamond overgrowth on platinum thin films deposited on diamond substrates
. 39:1286-1290.
2000
Low-power consumption InGaAs PIN diode switches for V-band applications
. 38:1208-1210.
1999
New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials
. 38:992-995.
1999
ELECTRICAL-PROPERTIES OF PARAELECTRIC (PB0.72LA0.28)TIO3 THIN-FILMS WITH HIGH LINEAR DIELECTRIC PERMITTIVITY - SCHOTTKY AND OHMIC CONTACTS
. 34:3142-3152.
1995
DC DISCHARGE ENHANCEMENT OF CHEMICAL ACTIVITY IN LASER-PRODUCED PLASMA
. 33:1018-1022.
1994
DC and high frequency characterization of metalorganic chemical vapor deposition (MOCVD) grown InP/InGaAs PNP heterojunction bipolar transistor
2002
Technology and first electrical characteristics of complementary NPN and PNP InAlAs/InGaAs heterojunction bipolar transistors
2002
Effect of oxygen component in magneto-active microwave CH4/He plasma on large-area diamond nucleation over Si
1999
Research
category
PHYSICS, APPLIED
Category
Identifiers
International Standard Serial Number (ISSN)
0021-4922