JAPANESE JOURNAL OF APPLIED PHYSICS

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JAPANESE JOURNAL OF APPLIED PHYSICS Journal

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Enhancement-mode Ga₂O₃ FETs with an unintentionally doped (001) β-Ga₂O₃ channel layer grown by metal-organic chemical vapor deposition. 63. 2024
Microstructure and electrical property of tantalum oxynitride thin films prepared using high-power impulse reactive magnetron sputtering. 59:116502. 2020
Yellow luminescence centers of GaN. 43:2471-2472. 2004
Boron-doped diamond film homoepitaxially grown on high-quality chemical-vapor-deposited diamond (100). 40:4145-4148. 2001
High-quality homoepitaxial diamond films grown at normal deposition rates. 40:L212-L214. 2001
Chemical-vapor-deposited diamond overgrowth on platinum thin films deposited on diamond substrates. 39:1286-1290. 2000
Low-power consumption InGaAs PIN diode switches for V-band applications. 38:1208-1210. 1999
New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials. 38:992-995. 1999
ELECTRICAL-PROPERTIES OF PARAELECTRIC (PB0.72LA0.28)TIO3 THIN-FILMS WITH HIGH LINEAR DIELECTRIC PERMITTIVITY - SCHOTTKY AND OHMIC CONTACTS. 34:3142-3152. 1995
DC DISCHARGE ENHANCEMENT OF CHEMICAL ACTIVITY IN LASER-PRODUCED PLASMA. 33:1018-1022. 1994
DC and high frequency characterization of metalorganic chemical vapor deposition (MOCVD) grown InP/InGaAs PNP heterojunction bipolar transistor 2002
Technology and first electrical characteristics of complementary NPN and PNP InAlAs/InGaAs heterojunction bipolar transistors 2002
Effect of oxygen component in magneto-active microwave CH₄/He plasma on large-area diamond nucleation over Si 1999

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PHYSICS, APPLIED Category

International Standard Serial Number (ISSN)

0021-4922