New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials Article

Krawczyk, S, Bejar, M, Khoukh, A et al. (1999). New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials . JAPANESE JOURNAL OF APPLIED PHYSICS, 38(2 B), 992-995. 10.1143/jjap.38.992

cited authors

  • Krawczyk, S; Bejar, M; Khoukh, A; Blanchet, R; Sermage, B; Cui, D; Pavlidis, D

authors

abstract

  • This paper introduces a new approach, based on room temperature (RT) scanning photoluminescence (SPL) measurements, for non-destructive quantitative mapping of the surface or interface recombination velocity in compound semiconductor structures. The developed technique is validated and applied here to spatially resolved evaluation of the surface recombination velocity of InP substrates and InGaAs(C)/InP heterostructures. © 1999 Publication Board, Japanese Journal of Applied Physics.

publication date

  • January 1, 1999

published in

Digital Object Identifier (DOI)

start page

  • 992

end page

  • 995

volume

  • 38

issue

  • 2 B