Yellow luminescence centers of GaN Article

Zhao, G, Hubbard, S, Pavlidis, D. (2004). Yellow luminescence centers of GaN . JAPANESE JOURNAL OF APPLIED PHYSICS, 43(5 A), 2471-2472. 10.1143/JJAP.43.2471

cited authors

  • Zhao, G; Hubbard, S; Pavlidis, D

authors

abstract

  • The method for measuring Shockley-Read-Hall (SRH) lifetime of yellow centers of GaN was developed. The capture-section ratio (150) of hole to electron is extracted by comparing the experimental and theoretical results. A marked increase in the SRH lifetime (from 0.75 to 7.0 ns) with the increasing in Si doping density (from 1.5 × 1017 to 8.8 × 10 18cm-3) was observed, and it is attributed to some Si dopant substituting for the Ga vacancy. In addition, it is also found that the YL centers are an important factor limiting the performance of GaN-based devices.

publication date

  • January 1, 2004

published in

Digital Object Identifier (DOI)

start page

  • 2471

end page

  • 2472

volume

  • 43

issue

  • 5 A