DC and high frequency characterization of metalorganic chemical vapor deposition (MOCVD) grown InP/InGaAs PNP heterojunction bipolar transistor Conference

Cui, D, Hsu, SSH, Pavlidis, D. (2002). DC and high frequency characterization of metalorganic chemical vapor deposition (MOCVD) grown InP/InGaAs PNP heterojunction bipolar transistor . JAPANESE JOURNAL OF APPLIED PHYSICS, 41(2 B), 1143-1149. 10.1143/jjap.41.1143

cited authors

  • Cui, D; Hsu, SSH; Pavlidis, D

authors

abstract

  • InP/InGaAs PNP heterojunction bipolar transistor (HBT) layers have been grown by metalorganic chemical vapor deposition (MOCVD) and devices have been fabricated using a self-aligned processing technology. A zinc-doped InP layer has been employed as the wide-bandgap emitter layer for the PNP HBT. The base layer used a 500 Å thick n-type InGaAs layer doped at 5 × 1018 cm-3. Successful high frequency operation of these devices has been demonstrated. A single-emitter 1 × 20 μm2 MOCVD-grown PNP InP/InGaAs HBT achieved current gain cutoff frequency (fT) of more than 11 GHz at a current density (JC) of 8.25 × 104 A/cm2.

publication date

  • January 1, 2002

published in

Digital Object Identifier (DOI)

start page

  • 1143

end page

  • 1149

volume

  • 41

issue

  • 2 B