Nonlinear optical response of GaN layers on sapphire: The impact of fundamental beam interference Article

Kravetsky, IV, Tiginyanu, IM, Hildebrandt, R et al. (2000). Nonlinear optical response of GaN layers on sapphire: The impact of fundamental beam interference . APPLIED PHYSICS LETTERS, 76(7), 810-812. 10.1063/1.125592

cited authors

  • Kravetsky, IV; Tiginyanu, IM; Hildebrandt, R; Marowsky, G; Pavlidis, D; Eisenbach, A; Hartnagel., HL

authors

abstract

  • GaN layers grown by metalorganic chemical-vapor deposition were characterized by optical second- and third-harmonic generation techniques. The angular dependence of the second-harmonic intensity in transmission showed a c-textured growth of the GaN layers on the sapphire substrates. The measured ratios d33/d15 and d33/d31 are equal to -2.02 and -2.03, respectively, which is indicative of a wurzite structure of the GaN layers. The measured d33 is 33 times that of the d11 of quartz. Fine oscillations were observed in the measured second- and third-harmonic angular dependencies that are explained by taking into account the interference of the fundamental beam in the GaN/sapphire structure. © 2000 American Institute of Physics.

publication date

  • February 14, 2000

published in

Digital Object Identifier (DOI)

start page

  • 810

end page

  • 812

volume

  • 76

issue

  • 7