Peculiarities of the electron field emission from quantum-size structures Conference

Litovchenko, VG, Evtukh, AA, Litvin, YM et al. (2003). Peculiarities of the electron field emission from quantum-size structures . APPLIED SURFACE SCIENCE, 215(1-4 SPEC.), 160-168. 10.1016/S0169-4332(03)00283-6

cited authors

  • Litovchenko, VG; Evtukh, AA; Litvin, YM; Goncharuk, NM; Hartnagel, H; Yilmazoglu, O; Pavlidis, D

authors

abstract

  • The electron field emission from semiconductor based layered structures has been investigated. Among studied structures were silicon tips coated with ultra-thin DLC layer, multilayer structures Si-SiO 2 -Si * -SiO 2 with delta-doped Si * layer, nanocomposite layers SiO x N y (Si) with Si nanocrystals embedded in SiO x N y matrix, GaN layers and Si-SiGe heterostructures. All of them have such peculiarities of electron field emission as peaks on emission current-voltage characteristics and corresponding Fowler-Nordheim plots. A physical model is proposed for explanation of experimental results. All emitters have layer, cluster wire or dot with quantum-size restriction in it. As a result, the quantum well with splitted electron levels exists or appears at electric field. Additional mechanism of electron emission-resonance tunneling is realized at definite electric fields. © 2003 Elsevier Science B.V. All rights reserved.

publication date

  • June 15, 2003

published in

Digital Object Identifier (DOI)

start page

  • 160

end page

  • 168

volume

  • 215

issue

  • 1-4 SPEC.