W-Band Monolithic Oscillator Using InAiAs/InGaAs HEMT Article

Kwon, Y, Pavlidis, D, Tutt, M et al. (1990). W-Band Monolithic Oscillator Using InAiAs/InGaAs HEMT . ELECTRONICS LETTERS, 26(18), 1425-1426. 10.1049/el:19900914

cited authors

  • Kwon, Y; Pavlidis, D; Tutt, M; Ng, GI; Lai, R; Brock, T

authors

abstract

  • A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was - 7 dBm at the chip level. This is the first report of an InAIAs/InGaAs monolithic oscillator operating at the Wband. © 1990, The Institution of Electrical Engineers. All rights reserved.

publication date

  • January 1, 1990

published in

Digital Object Identifier (DOI)

start page

  • 1425

end page

  • 1426

volume

  • 26

issue

  • 18