High-performance modulation-doped heterostructure-thermopiles for uncooled infrared image-sensor application Conference

Abe, M, Kogushi, N, Siong Ang, K et al. (2012). High-performance modulation-doped heterostructure-thermopiles for uncooled infrared image-sensor application . E95-C(8), 1354-1362. 10.1587/transele.E95.C.1354

cited authors

  • Abe, M; Kogushi, N; Siong Ang, K; Hofstetter, R; Manoj, K; Retnam, LN; Wang, H; Ing Ng, G; Jin, C; Pavlidis, D

authors

abstract

  • Novel thermopiles based on modulation doped Al-GaAs/InGaAs and AlGaN/GaN heterostructures are proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time are designed to 4,900V/W with 110 μs for AlGaAs/InGaAs, and to 460V/W with 9 μs for AlGaN/GaN thermopiles, respectively. Based on integrated HEMT-MEMS technology, the AlGaAs/InGaAs 32×32 matrix FPAs are fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA image sensor application. Copyright © 2012 The Institute of Electronics, Information and Communication Engineers.

publication date

  • January 1, 2012

Digital Object Identifier (DOI)

start page

  • 1354

end page

  • 1362

volume

  • E95-C

issue

  • 8