Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire Article

Tiginyanu, IM, Kravetsky, IV, Pavlidis, D et al. (2000). Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire . 595 W11521-W11526. 10.1557/PROC-595-F99W11.52

cited authors

  • Tiginyanu, IM; Kravetsky, IV; Pavlidis, D; Eisenbach, A; Hildebrandt, R; Marowsky, G; Hartnagel, HL

authors

abstract

  • Optical second and third harmonic generation measurements were carried out on GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The measured d33 is 33 times the dM of quartz. The angular dependence of second-harmonic intensity as well as the measured ratios d33/d15 = -2. 02 and d33/d31= -2. 03 confirm the wurzite structure of the studied GaN layers with the optical c-axis oriented perpendicular to the sample surface. Fine oscillations were observed in the measured second and third harmonic angular dependencies. A simple model based on the interference of the fundamental beam in the sample was used to explain these oscillations. © 2(XX) Materials Research Society.

publication date

  • January 1, 2000

Digital Object Identifier (DOI)

start page

  • W11521

end page

  • W11526

volume

  • 595