Integration of complementary NPN and PNP InAlAs/InGaAs HBTs Conference

Cui, D, Pavlidis, D, Sawdai, D et al. (2001). Integration of complementary NPN and PNP InAlAs/InGaAs HBTs . 497-500.

cited authors

  • Cui, D; Pavlidis, D; Sawdai, D; Chin, P; Block, T

authors

abstract

  • In this work, monolithic integration of NPN and PNP InAlAs/InGaAs complementary HBTs was demonstrated using a regrowth approach by MBE. The integrated HBTs showed little degradation over similar discrete devices. The DC gain was 35 for both integrated NPN and PNP HBTs. fT of 79.6GHz and fmax of 109GHz were achieved for NPN devices while fT of 11.6GHz and fmax of 22.6 GHz were achieved for PNP devices.

publication date

  • January 1, 2001

start page

  • 497

end page

  • 500