Gallium-nitride-based plasmonic multilayer operating at 1.55 μm Article

Stolz, A, Considine, L, Faci, S et al. (2012). Gallium-nitride-based plasmonic multilayer operating at 1.55 μm . OPTICS LETTERS, 37(15), 3039-3041. 10.1364/OL.37.003039

cited authors

  • Stolz, A; Considine, L; Faci, S; Dogheche, E; Tripon-Canseliet, C; Loiseaux, B; Pavlidis, D; Decoster, D; Chazelas, J

authors

abstract

  • In this Letter, we have designed and fabricated a III-V semiconductor multilayer based on surface plasmon resonance (SPR) operating at the telecom wavelength. Optimization of the optogeometrical parameters and the metal/semiconductor layers required for this novel structure was conducted accurately by theoretical tools using the Maxwell equations. Technological fabrication of the device and its experimental characterizations using an evanescent coupling configuration was performed: the results have confirmed the existence of SPR associated to a sharp width response. This study could be a first step in the design of new plasmonic-semiconductor-based optical devices such as modulators and switches. © 2012 Optical Society of America.

publication date

  • August 1, 2012

published in

Digital Object Identifier (DOI)

start page

  • 3039

end page

  • 3041

volume

  • 37

issue

  • 15