A new pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers HEMT using Al/sub 0.52/In/sub 0.48/P as barrier layer Conference

Ng, GI, Chan, YJ, Pavlidis, D et al. (1993). A new pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers HEMT using Al/sub 0.52/In/sub 0.48/P as barrier layer . 505-508. 10.1109/iciprm.1993.380573

cited authors

  • Ng, GI; Chan, YJ; Pavlidis, D; Kwon, Y; Brock, T; Kuo, JM

authors

publication date

  • January 1, 1993

keywords

  • 40 Engineering
  • 4018 Nanotechnology
  • 51 Physical Sciences

Digital Object Identifier (DOI)

Conference

  • 1993 (5th) International Conference on Indium Phosphide and Related Materials

publisher

  • Institute of Electrical and Electronics Engineers (IEEE)

start page

  • 505

end page

  • 508