The performance characteristics of transimpedance and transimpedance/voltage photoreceivers using an In0.53Ga0.47As p-i-n photodiode integrated with a 0.1 μm gate length regrown pseudomorphic In0.60Ga0.40As MODFET realized by MBE have been investigated. The photodiode exhibits very low dark current and a responsivity of 0.6 A/W at λ = 1.55 μm. The regrown MODFETs have extrinsic transconductance values as high as 610 mS/mm and channel currents up to 350 mA/mm at a drain bias of 1.5 V. The measured temporal response of the photoreceiver with a transimpedance amplifier exhibits a FWHM value of 90 ps and a transimpedance gain of 45 dBΩ with a 800 Ω feedback resistor. This photoreceiver demonstrated 24 dB optical-to-electrical conversion gain at 9.3 GHz. The photoreceiver with a transimpedance/voltage amplifier shows a FWHM of 200 ps and a transimpedance gain of 63 dBΩ with a 1.2 KΩ feedback resistor.
