Measured negative differential resistivity for GaN Gunn diodes on GaN substrate
Article
Yilmazoglu, O, Mutamba, K, Pavlidis, D et al. (2007). Measured negative differential resistivity for GaN Gunn diodes on GaN substrate
. ELECTRONICS LETTERS, 43(8), 480-481. 10.1049/el:20070658
Yilmazoglu, O, Mutamba, K, Pavlidis, D et al. (2007). Measured negative differential resistivity for GaN Gunn diodes on GaN substrate
. ELECTRONICS LETTERS, 43(8), 480-481. 10.1049/el:20070658
Current-voltage characteristics obtained by pulse-biasing GaN Gunn diodes on GaN substrate showed a wide negative differential resistance (NDR) region. Electrical fields of up to twice the threshold value did not lead to any electromigration effects from the contacts. The electron drift-velocity (V D) was estimated to be 1.9 × 107 cm/s. This represents the first demonstration of a stable NDR with a vertical GaN-based Gunn device.
