A planar heterostructure diode W-band mixer using monolithic balanced integrated approach on InP Conference

Kwon, Y, Pavlidis, D, Marsh, P et al. (1992). A planar heterostructure diode W-band mixer using monolithic balanced integrated approach on InP . 67-70. 10.1109/GAAS.1992.247221

cited authors

  • Kwon, Y; Pavlidis, D; Marsh, P; Ng, GI; Brock, T

authors

abstract

  • The design, fabrication and experimental characteristics of a balanced InAlAs/InGaAs heterostruc-ture diode mixer are presented. The mixer is mono-lithically integrated on InP substrates and shows a minimum conversion loss of 12.1 dB with a 91 GHz LO drive of 12 dBm and an IF of 2 GHz. A reasonably flat RF response has been found from S6.5 GHz to 95.5 GHz (10 % bandwidth). The characteristics of the planar heterostructure diodes are studied and the impact of their parameters on the mixer conversion loss is investigated. This diode design is the same as for HEMT's and offers the possibility of easy monolithic integration with FFT components as necessary for millimeter-wave modules.

publication date

  • January 1, 1992

Digital Object Identifier (DOI)

International Standard Book Number (ISBN) 10

International Standard Book Number (ISBN) 13

start page

  • 67

end page

  • 70