Demonstration of GaInP/GaAs heterojunction bipolar transistors grown with reduced toxicity all-metalorganic precursors Conference

Ng, GI, Pavlidis, D, Samelis, A et al. (1994). Demonstration of GaInP/GaAs heterojunction bipolar transistors grown with reduced toxicity all-metalorganic precursors . Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 399-402.

cited authors

  • Ng, GI; Pavlidis, D; Samelis, A; Pehlke, D; Garcia, JC; Hirtz, JP

abstract

  • The paper performs a systematic study of the impact the source of group V element has on HBT performance and reports the DC and microwave characteristics of GaInP/GaAs HBT's grown in an environment of reduced toxicity using all-metalorganic precursors like tertiarybutylphosphine (TBP), tertiarybutylarsine (TBA), triethylgallium (TEG), trimethylgallium (TMG) and trimethylindium (TMI). The suitability of Chemical Beam Epitaxy (CBE) for the growth of GaInP/GaAs HBT's using TBA and TBP as As and P sources was investigated.

authors

publication date

  • January 1, 1994

published in

start page

  • 399

end page

  • 402