Strain sensitivity of AlGaN/GaN HEMT structures for sensing applications Conference

Yilmazoglu, O, Mutamba, K, Pavlidis, D et al. (2006). Strain sensitivity of AlGaN/GaN HEMT structures for sensing applications . E89-C(7), 1037-1041. 10.1093/ietele/e89-c.7.1037

cited authors

  • Yilmazoglu, O; Mutamba, K; Pavlidis, D; Mbarga, MR

authors

abstract

  • Sensing elements based on AlGaNGaN HEMT and Schottky diode structures have been investigated in relation with the strain sensitivity of their characteristics. Piezoresistance of the Al0.3Ga0.7NGaN HEMT-channel as well as changes in the current-voltage characteristics of the Schottky diodes have been observed with gauge factor (GF) values ranging between 19 and 350 for the selected biasing conditions. While a stable response to strain was measured, the observed temperature dependence of the channel resistance demonstrates the need for a systematic characterisation of the sensor properties to allow compensation of the observed temperature effects. Copyright © 2006 The Institute of Electronics, Information and Communication Engineers.

publication date

  • January 1, 2006

Digital Object Identifier (DOI)

start page

  • 1037

end page

  • 1041

volume

  • E89-C

issue

  • 7