Evaluation of AlGaN/GaN MODFET with low noise, high breakdown and power characteristics was done. A noise figure of 1.9 dB with associated gain of 16.2 dB was obtained at a quiescent point of VDS = 10 and IDS = 30 mA at 10 GHz. Investigation of a MODFET noise model and its correlation with gate leakage current was also done.
