First power demonstration of InP/GaAsSb/InP double HBTS Conference

Zhu, X, Pavlidis, D, Zhao, G et al. (2004). First power demonstration of InP/GaAsSb/InP double HBTS . 757-760.

cited authors

  • Zhu, X; Pavlidis, D; Zhao, G; Han, BK; Wibowo, A; Pan, N

authors

abstract

  • The microwave power performance of InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) was evaluated and is reported for the first time. Fabricated DHBTs showed DC gain of 15-35, small turn-on voltages of 0.44V at 1kA/cm2, almost zero offset voltage, and emitter-collector breakdown voltage BVCEO ≥ 6V. Devices with 3×5μm2 emitters showed maximum fT of 75GHz and maximum fmax of 34GHz when biased at JC =1.7×105A/cm2 and VCE =2.0V. Devices with 5×10μm2 emitters demonstrated power gain of 10dB with 1dB-compressed output power of 18dBm at 5GHz. High power density of 1.6mW/μm2 and associated efficiency of 33% were obtained using these devices. © 2004 IEEE.

publication date

  • December 1, 2004

start page

  • 757

end page

  • 760