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First power demonstration of InP/GaAsSb/InP double HBTS
Conference
Zhu, X, Pavlidis, D, Zhao, G
et al
. (2004). First power demonstration of InP/GaAsSb/InP double HBTS .
757-760.
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Zhu, X, Pavlidis, D, Zhao, G
et al
. (2004). First power demonstration of InP/GaAsSb/InP double HBTS .
757-760.
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cited authors
Zhu, X; Pavlidis, D; Zhao, G; Han, BK; Wibowo, A; Pan, N
authors
Pavlidis, Dimitrios
abstract
The microwave power performance of InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) was evaluated and is reported for the first time. Fabricated DHBTs showed DC gain of 15-35, small turn-on voltages of 0.44V at 1kA/cm2, almost zero offset voltage, and emitter-collector breakdown voltage BVCEO ≥ 6V. Devices with 3×5μm2 emitters showed maximum fT of 75GHz and maximum fmax of 34GHz when biased at JC =1.7×105A/cm2 and VCE =2.0V. Devices with 5×10μm2 emitters demonstrated power gain of 10dB with 1dB-compressed output power of 18dBm at 5GHz. High power density of 1.6mW/μm2 and associated efficiency of 33% were obtained using these devices. © 2004 IEEE.
publication date
December 1, 2004
Additional Document Info
start page
757
end page
760