GaN Gunn diodes for THz signal generation Article

Alekseev, E, Pavlidis, D. (2000). GaN Gunn diodes for THz signal generation . 3 1905-1908.

cited authors

  • Alekseev, E; Pavlidis, D

authors

abstract

  • The frequency and power capability of GaN-based Gunn diodes is evaluated using transient hydrodynamic simulations. GaN Gunn oscillators with 2μm-thick GaN Gunn diodes are predicted to have fundamental frequency of 148-162GHz and power density of >105W/cm2. Due to their high frequency and power characteristics, applications of these devices are envisaged for THz signal generation.

publication date

  • December 11, 2000

start page

  • 1905

end page

  • 1908

volume

  • 3