Use of double heterojunction diodes in monolithic phase shifters Conference

Cazaux, JL, Pavlidis, D, Ng, GI et al. (1988). Use of double heterojunction diodes in monolithic phase shifters .(18), 1005-1010. 10.1109/euma.1988.333941

cited authors

  • Cazaux, JL; Pavlidis, D; Ng, GI; Tutt, M

authors

abstract

  • Double heterojunction diodes are studied theoretically and experimentally and show improved capacitance ratios typically of the order of 7 over MESFET technology. A monolithic T-phase shifter has been built using this approach and good phase shift characteristics (Δφ=55 degrees, insertion loss = 2 dB, VSWR≤1.8) has been demonstrated experimentally at 6 GHz. The design sensitivity on material parameters is presented and the relative merits of the heterostructure approach for monolithic applications are discussed.

publication date

  • January 1, 1988

Digital Object Identifier (DOI)

start page

  • 1005

end page

  • 1010

issue

  • 18