Use of double heterojunction diodes in monolithic phase shifters
Conference
Cazaux, JL, Pavlidis, D, Ng, GI et al. (1988). Use of double heterojunction diodes in monolithic phase shifters
.(18), 1005-1010. 10.1109/euma.1988.333941
Cazaux, JL, Pavlidis, D, Ng, GI et al. (1988). Use of double heterojunction diodes in monolithic phase shifters
.(18), 1005-1010. 10.1109/euma.1988.333941
Double heterojunction diodes are studied theoretically and experimentally and show improved capacitance ratios typically of the order of 7 over MESFET technology. A monolithic T-phase shifter has been built using this approach and good phase shift characteristics (Δφ=55 degrees, insertion loss = 2 dB, VSWR≤1.8) has been demonstrated experimentally at 6 GHz. The design sensitivity on material parameters is presented and the relative merits of the heterostructure approach for monolithic applications are discussed.