Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si3N4 Article

Seo, S, Cho, E, Pavlidis, D. (2008). Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si3N4 . ELECTRONICS LETTERS, 44(24), 1428-1429. 10.1049/el:20081998

cited authors

  • Seo, S; Cho, E; Pavlidis, D

authors

abstract

  • The DC and RF characteristics of AlN/GaN metal insulator semiconductor field effect transistors (MISFETs) on sapphire substrate with in situ deposited Si3N4 is presented. A 2nm-thick Si3N 4 was in situ deposited directly on the AlN barrier layer by the same metal organic chemical vapour deposition system as the one used for growth of the epitaxial layers. Large improvements of AlN/GaN MISFET DC and RF characteristics were observed with in situ deposited Si3N 4. Fabricated AlN/GaN MISFETs with 1m gate length and 200m width showed a maximum drain current density of 403mA/mm and a peak extrinsic transconductance of 206 mS/mm. Current gain cutoff frequency (fT) and maximum oscillation frequency (fMAX) were found to be 10.2 and 32.3GHz, respectively. © The Institution of Engineering and Technology 2008.

publication date

  • November 27, 2008

published in

Digital Object Identifier (DOI)

start page

  • 1428

end page

  • 1429

volume

  • 44

issue

  • 24