Microwave potential of GaN-based Gunn devices Article

Alekseev, E, Pavlidis, D. (2000). Microwave potential of GaN-based Gunn devices . ELECTRONICS LETTERS, 36(2), 176-178. 10.1049/el:20000200

cited authors

  • Alekseev, E; Pavlidis, D

authors

abstract

  • Transient hydrodynamic simulations are used to carry out harmonic power analysis of GaN and GaAs Gunn diode oscillators. GaN-based devices are shown to have twice the frequency and a hundred times the power capability of GaAs Gunn diodes.

publication date

  • January 20, 2000

published in

Digital Object Identifier (DOI)

start page

  • 176

end page

  • 178

volume

  • 36

issue

  • 2