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Microwave potential of GaN-based Gunn devices
Article
Alekseev, E, Pavlidis, D. (2000). Microwave potential of GaN-based Gunn devices .
ELECTRONICS LETTERS,
36(2), 176-178. 10.1049/el:20000200
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Alekseev, E, Pavlidis, D. (2000). Microwave potential of GaN-based Gunn devices .
ELECTRONICS LETTERS,
36(2), 176-178. 10.1049/el:20000200
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Overview
cited authors
Alekseev, E; Pavlidis, D
authors
Pavlidis, Dimitrios
abstract
Transient hydrodynamic simulations are used to carry out harmonic power analysis of GaN and GaAs Gunn diode oscillators. GaN-based devices are shown to have twice the frequency and a hundred times the power capability of GaAs Gunn diodes.
publication date
January 20, 2000
published in
ELECTRONICS LETTERS
Journal
Identifiers
Digital Object Identifier (DOI)
https://doi.org/10.1049/el:20000200
Additional Document Info
start page
176
end page
178
volume
36
issue
2