Experimental demonstration and observation of a plasmon wave occuring at a GaAs-Au-GaN interface Article

Stolz, A, Tchernycheva, M, Tilmant, P et al. (2013). Experimental demonstration and observation of a plasmon wave occuring at a GaAs-Au-GaN interface . OPTICS LETTERS, 38(14), 2425-2427. 10.1364/OL.38.002425

cited authors

  • Stolz, A; Tchernycheva, M; Tilmant, P; Dogheche, E; Pavlidis, D; Decoster, D

authors

abstract

  • Integration of surface plasmon structures using semiconductor materials is limited due to the difficulties encountered in maintaining the resonance conditions upon packaging. We propose here a technology process allowing us to bond two semiconductors, such as gallium nitride (GaN) and gallium arsenide (GaAs), through a thin metal layer. This solution allows the excitation of a surface plasmon wave in an integrated classical Kretschmann configuration. The Letter presents various metal bonding conditions employed for Au deposited on both GaN/sapphire and GaAs substrates aiming at semiconductor-metal- semiconductor interfaces transparent at telecom wavelengths. The process conditions for the bondings are optimized using Ti/Au (3 nm30 nm) layers on each of the wafers to be bonded under an applied pressure of 500 mbar at a low temperature of 250°C. © 2013 Optical Society of America.

publication date

  • July 15, 2013

published in

Digital Object Identifier (DOI)

start page

  • 2425

end page

  • 2427

volume

  • 38

issue

  • 14