Quasi-1D channel InAlAs/InGaAs HEMT's with improved fmax characteristics Conference

Kwon, Y, Pavlidis, D, Brock, T. (1994). Quasi-1D channel InAlAs/InGaAs HEMT's with improved fmax characteristics . Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 591-594.

cited authors

  • Kwon, Y; Pavlidis, D; Brock, T

abstract

  • Applied to InAlAs/InGaAs HEMT's was the quasi-1D channel. In order to study the impact of quasi-1D channel geometry on the DC and microwave properties of submicron InAlAs/InGaAs HEMT's, various channel widths were realized.

authors

publication date

  • January 1, 1994

published in

start page

  • 591

end page

  • 594