Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Edit Your Profile

Conference Proceedings - International Conference on Indium Phosphide and Related Materials Journal

publication venue for

Characterization of carbon induced lattice contraction of highly carbon doped InGaAs. 526-529. 2000
High power performance using InAlAs/InGaAs single heterojunction bipolar transistors. 473-476. 2000
Hole impact ionization coefficient in (100)-oriented In0.53Ga0.47As based on PNP InAlAs/InGaAs HBT's. 258-261. 2000
InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems. 341-344. 2000
High switching rate capability of mm-wave InGaAs PIN diodes. 443-446. 1999
Minority carrier lifetime in MOCVD-grown C- and Zn-doped InGaAs. 127-130. 1999
Properties of fully self-aligned InAlAs/InGaAs PNP HBTs with very thin bases. 187-190. 1999
First power demonstration of InP/GaAsSb/InP double HBTS 2004
First high-frequency and power demonstration of InGaAlAs/GaAsSb/InP double HBTs 2003
III-V Nitride electronics 2002
Ka-band SPSTs in InP-based technology using coplanar waveguides 1998
Metalorganic chemical vapor deposition (MOCVD) material growth and application to InP-based electronic devices 1998
New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials 1998
Power performance of PNP InAlAs/InGaAs HBTs 1998
Power-handling capability of w-band InGaAs pin diode switches 1998
New scanning photoluminescence technique for mapping the lifetime and the doping density: Application to carbon doped InGaAs/InP layers and heterostructures 1997
InGaAs-based mm-wave integrated subharmonic mixer exhibiting low input power requirement and low noise characteristics 1996
Power performance of InGaAs/InP single HBTs 1996
Characteristics of iron doped Pt-InAlAs Schottky diodes grown by LP-MOCVD using ferrocene 1995
Heavily carbon doped InGaAs lattice matched to InP grown by LP-MOCVD using TMIn, TMGa and liquid CCl4 1995
Large-signal characteristics of InP-based heterojunction bipolar transistors and their use in optoelectronic preamplifier design 1995
Use of spectrally resolved scanning photoluminescence for optimizing the growth conditions of InAlAs/InP heterostructures 1995
Demonstration of GaInP/GaAs heterojunction bipolar transistors grown with reduced toxicity all-metalorganic precursors 1994
InAlAs/InGaAs varactor diodes with THz cutoff frequencies fabricated by planar integrated technology 1994
MOCVD growth parameter study of InP-based materials for high-performance HEMT's 1994
Quasi-1D channel InAlAs/InGaAs HEMT's with improved fmax characteristics 1994

International Standard Serial Number (ISSN)

1092-8669