New scanning photoluminescence technique for mapping the lifetime and the doping density: Application to carbon doped InGaAs/InP layers and heterostructures
Conference
Krawczyk, SK, Bejar, M, Nuban, MF et al. (1997). New scanning photoluminescence technique for mapping the lifetime and the doping density: Application to carbon doped InGaAs/InP layers and heterostructures
. 525-528.
Krawczyk, SK, Bejar, M, Nuban, MF et al. (1997). New scanning photoluminescence technique for mapping the lifetime and the doping density: Application to carbon doped InGaAs/InP layers and heterostructures
. 525-528.
A scanning photoluminescence method is presented for mapping the lifetime and the doping density in carbon doped InGaAs layers and InP/InGaAs/InP heterostructures. High spatial resolution, about 1 μm, and wafer scale mappings can be carried out at room temperature in a fast and non-destructive way. The technique covers a wide range of C-doping levels of up to 1020 cm-3 and of lifetime values (down to 10-12 s).