New scanning photoluminescence technique for mapping the lifetime and the doping density: Application to carbon doped InGaAs/InP layers and heterostructures Conference

Krawczyk, SK, Bejar, M, Nuban, MF et al. (1997). New scanning photoluminescence technique for mapping the lifetime and the doping density: Application to carbon doped InGaAs/InP layers and heterostructures . Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 525-528.

cited authors

  • Krawczyk, SK; Bejar, M; Nuban, MF; Blanchet, RC; Sermage, B; Benchimol, JL; Hong, K; Cui, D; Pavlidis, D

abstract

  • A scanning photoluminescence method is presented for mapping the lifetime and the doping density in carbon doped InGaAs layers and InP/InGaAs/InP heterostructures. High spatial resolution, about 1 μm, and wafer scale mappings can be carried out at room temperature in a fast and non-destructive way. The technique covers a wide range of C-doping levels of up to 1020 cm-3 and of lifetime values (down to 10-12 s).

authors

publication date

  • January 1, 1997

published in

start page

  • 525

end page

  • 528