Hole impact ionization coefficient in (100)-oriented In0.53Ga0.47As based on PNP InAlAs/InGaAs HBT's Article

Buttari, D, Chini, A, Meneghesso, G et al. (2000). Hole impact ionization coefficient in (100)-oriented In0.53Ga0.47As based on PNP InAlAs/InGaAs HBT's . 258-261.

cited authors

  • Buttari, D; Chini, A; Meneghesso, G; Zanoni, E; Sawdai, D; Pavlidis, D; Hsu, SSH

authors

abstract

  • The hole multiplication factor in pnp In0.52Al0.48As/In0.53G0.47As single heterojunction bipolar transistors (HBT's) has been measured as a function of the base-collector bias. Hole impact ionization coefficient βp has been estimated by taking into account the Early effect, the collector-base leakage current ICBO, thermal effects and the spread in the nominal device processing parameters. Numerical corrections for dead space and current-induced collector charge density variations were made. The data obtained in this way agree with the most recent photomultiplication measurements available in literature.

publication date

  • December 3, 2000

start page

  • 258

end page

  • 261