Large-signal characteristics of InP-based heterojunction bipolar transistors and their use in optoelectronic preamplifier design
Conference
Samelis, A, Pavlidis, D, Sejalon, F et al. (1995). Large-signal characteristics of InP-based heterojunction bipolar transistors and their use in optoelectronic preamplifier design
. 648-651.
Samelis, A, Pavlidis, D, Sejalon, F et al. (1995). Large-signal characteristics of InP-based heterojunction bipolar transistors and their use in optoelectronic preamplifier design
. 648-651.
A large-signal model suitable for InP-InGaAs heterojunction bipolar transistors is developed. Breakdown effects are incorporated into the Gummel-Poon formulation. The model is validated by comparisons with on-wafer power measurements. The characteristics of two transimpedance amplifiers of different designs are studied using the large-signal models. Circuit characteristics can be modified under large-signal operations. Transimpedance degradation and pronounced self-bias can take place and these depend on the type of optoelectronic integrated circuits.
