Use of spectrally resolved scanning photoluminescence for optimizing the growth conditions of InAlAs/InP heterostructures Conference

Hong, K, Klingelhofer, C, Ducroquet, F et al. (1995). Use of spectrally resolved scanning photoluminescence for optimizing the growth conditions of InAlAs/InP heterostructures . 241-244.

cited authors

  • Hong, K; Klingelhofer, C; Ducroquet, F; Nuban, MF; Bearzi, E; Pavlidis, D; Krawczyk, SK; Guillot, G

authors

abstract

  • Optimum growth conditions were determined for InAlAs/InP heterostructure materials based on scanning photoluminescence (SPL), structural and electrical characteristics of wafers. The impact of metalorganic chemical vapor deposition growth parameters such as susceptor rotating speed on compositional and thickness uniformity of the layer is also reported using SPL. SPL and complimentary thickness measurements showed the correlation between compositional and thickness uniformity and suggest that the spatial uniformity of the boundary layer is responsible for the spatial uniformity of the grown layers. Compositional uniformity could be a measure for speed, temperature and boundary layer optimization.

publication date

  • January 1, 1995

start page

  • 241

end page

  • 244