The switching-rate capability of mm-wave InGaAs PIN diodes of various sizes was evaluated for the first time by measuring their response times under various bias conditions. The dependencies of InGaAs PIN diode switching times are discussed, and the results are correlated with their DC characteristics. InGaAs PIN diodes demonstrated short switching times (fall time τF = 250ps and rise time τR = 130ps). Switching in large diodes was limited by bulk time constants, while faster switching in small diodes was due to increased surface effects. Switching of InGaAs PIN diodes at a high rate of 5Gbps was observed.
