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InAlAs/InGaAs varactor diodes with THz cutoff frequencies fabricated by planar integrated technology
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Marsh, P, Ng, GI, Pavlidis, D
et al
. (1994). InAlAs/InGaAs varactor diodes with THz cutoff frequencies fabricated by planar integrated technology .
595-598.
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Marsh, P, Ng, GI, Pavlidis, D
et al
. (1994). InAlAs/InGaAs varactor diodes with THz cutoff frequencies fabricated by planar integrated technology .
595-598.
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cited authors
Marsh, P; Ng, GI; Pavlidis, D; Hong, K
authors
Pavlidis, Dimitrios
abstract
Reported here is the planar integrated technology which utilizes InP-based materials and plated Au airbridges to contact the anode. By avoiding the use of a bridge-supporting dielectric, this airbridge technology reduces parasitics.
publication date
January 1, 1994
Additional Document Info
start page
595
end page
598