Power-handling capability of w-band InGaAs pin diode switches Conference

Alekseev, E, Cui, D, Pavlidis, D. (1998). Power-handling capability of w-band InGaAs pin diode switches . Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 199-202.

cited authors

  • Alekseev, E; Cui, D; Pavlidis, D

abstract

  • Measurements of InGaAs PIN diode switches were carried out at the collision-avoidance systems (CAS) frequency of 77GHz and at 102GHz using an automated on-wafer load-pull measurement system. The results revealed that the switches do not demonstrate any degradation of POUT (PIN) characteristics for input power levels up to maximum available power of 1+12dBm at 102GHz and for as much as +20dBm at 8Ghz when biased in the OFF-state (VD=-1V and VD=-2V correspondingly).

authors

publication date

  • December 1, 1998

published in

start page

  • 199

end page

  • 202