Measurements of InGaAs PIN diode switches were carried out at the collision-avoidance systems (CAS) frequency of 77GHz and at 102GHz using an automated on-wafer load-pull measurement system. The results revealed that the switches do not demonstrate any degradation of POUT (PIN) characteristics for input power levels up to maximum available power of 1+12dBm at 102GHz and for as much as +20dBm at 8Ghz when biased in the OFF-state (VD=-1V and VD=-2V correspondingly).
