1/f Noise in AlGaAs/GaAs HBTs using ultrasensitive characterization techniques for identifying noise mechanisms
Conference
Tutt, MN, Pavlidis, D, Pehlke, D et al. (1991). 1/f Noise in AlGaAs/GaAs HBTs using ultrasensitive characterization techniques for identifying noise mechanisms
. 120 317-322.
Tutt, MN, Pavlidis, D, Pehlke, D et al. (1991). 1/f Noise in AlGaAs/GaAs HBTs using ultrasensitive characterization techniques for identifying noise mechanisms
. 120 317-322.
The 1/f noise characteristics and mechanisms of GaAs/AlGaAs HBT's are studied using conventional short circuit current measurements (SI(C)(f) and and S1(B)(f)) and an indirect highly sensitive technique based on noise figure characterization. The S1(C)(f) and SI(B)(f) follows a 1/f dependence at low frequencies, for moderate bias conditions. A Lorentz component is found in the spectra. The base resistances are obtained by approximating them to the correlation resistances and range from 17Ω to 63Ω. The intrinsic noise sources are studied using a simple model employing two internal, uncorrelated noise sources. These sources are similar to the SI(C)(f) and SI(B)(f) at moderate bias conditions. However, the intrinsic collector noise differs from SI(C)(f) at low bias conditions.
