Dispersion, high-frequency and power characteristics of AIN/GaN metal insulator semiconductor field effect transistors with in-situ MOCVD deposited Si3N4Conference
Seo, S, Cho, E, Aroshvili, G et al. (2010). Dispersion, high-frequency and power characteristics of AIN/GaN metal insulator semiconductor field effect transistors with in-situ MOCVD deposited Si3N4
. E93-C(8), 1245-1250. 10.1587/transele.E93.C.1245
Seo, S, Cho, E, Aroshvili, G et al. (2010). Dispersion, high-frequency and power characteristics of AIN/GaN metal insulator semiconductor field effect transistors with in-situ MOCVD deposited Si3N4
. E93-C(8), 1245-1250. 10.1587/transele.E93.C.1245