Dispersion, high-frequency and power characteristics of AIN/GaN metal insulator semiconductor field effect transistors with in-situ MOCVD deposited Si3N4 Conference

Seo, S, Cho, E, Aroshvili, G et al. (2010). Dispersion, high-frequency and power characteristics of AIN/GaN metal insulator semiconductor field effect transistors with in-situ MOCVD deposited Si3N4 . E93-C(8), 1245-1250. 10.1587/transele.E93.C.1245

cited authors

  • Seo, S; Cho, E; Aroshvili, G; Jin, C; Pavlidis, D; Considine, L

authors

abstract

  • SUMMARY The paper presents a systematic study of in-situ passivated AIN/GaN Metal Insulator Semiconductor Field Effect Transistors (MIS-FETs) with submicron gates. DC, high frequency small signal, large signal and low frequency dispersion effects are reported. The DC characteristics are analyzed in conjunction with the power performance of the device at high frequencies. Studies of the low frequency characteristics are presented and the results are compared with those of AlGaN/GaN High Electron Mobility Transistors (HEMTs). Small signal measurements showed a current gain cutoff frequency and maximum oscillation frequency of 49.9 GHz and 102.3 GHz respectively. The overall characteristics of the device include a peak current density of 335 mA/mm, peak extrinsic transconductance of 130mS/mm, a maximum output power density of 533mW/mm with peak power added efficiency (P.A.E.) of 41.3% and linear gain of 17 dB. The maximum frequency dispersion of transconductance and output resistance of the fabricated MISFETs is 20% and 21% respectively. Copyright © 2010 The Institute of Electronics, Information and Communication Engineers.

publication date

  • January 1, 2010

Digital Object Identifier (DOI)

start page

  • 1245

end page

  • 1250

volume

  • E93-C

issue

  • 8