E-beam fabricated GaN schottky diode: High-frequency and non-linear properties Conference

Jin, C, Zaknoune, M, Ducatteau, D et al. (2013). E-beam fabricated GaN schottky diode: High-frequency and non-linear properties . 10.1109/MWSYM.2013.6697734

cited authors

  • Jin, C; Zaknoune, M; Ducatteau, D; Pavlidis, D

authors

abstract

  • E-Beam processed GaN-based Schottky diodes for microwave, millimeter-wave power applications were characterized under both small-signal and large-signal conditions. A Large-Signal Network Analyzer was used and equivalent circuit models were obtained by combining small signal S-parameter data with large-signal time-domain waveform optimization. The impact of anode diameter size and layer design were investigated and the active layer thickness dependence of the intrinsic elements was analyzed. Large-signal measurements allowed device non-linearity evaluation. © 2013 IEEE.

publication date

  • December 1, 2013

Digital Object Identifier (DOI)

International Standard Book Number (ISBN) 13