Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCl4Article
Hong, K, Pavlidis, D. (1996). Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCl4
. JOURNAL OF ELECTRONIC MATERIALS, 25(3), 449-455. 10.1007/BF02666619
Hong, K, Pavlidis, D. (1996). Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCl4
. JOURNAL OF ELECTRONIC MATERIALS, 25(3), 449-455. 10.1007/BF02666619
The growth of heavily carbon doped p-InGaAs (∼6.5x1019cm-3) lattice-matched to InP is reported. Growth is achieved by low pressure metalorganic chemical vapor deposition (LP-MOCVD) using all methyl metalorganic sources and liquid CCl4. The impact of growth temperature and CCl4 flow rates on growth rate reduction and alloy compositional change was investigated. Post-growth isothermal and isochronal annealing experiments were performed on the carbon doped InGaAs layers and a quantitative analysis of carrier activation is presented using Hall and secondary ion mass spectroscopy measurements. Reduced self-compensation by carbon displacement from indium to arsenic site, as well as, reduced hydrogen passivation are suggested as possible mechanisms responsible for carrier activation upon thermal annealing.
