Florida International University
Edit Your Profile
FIU Discovery
Toggle navigation
Browse
Home
People
Organizations
Scholarly & Creative Works
Research Facilities
Support
Edit Your Profile
JOURNAL OF ELECTRONIC MATERIALS
Journal
Overview
Research
Identifiers
Other
View All
Overview
publication venue for
Field Emission Properties of Top-Down GaN Nanowires Characterized in Vacuum by a Nanometer-Resolution Piezoelectric Probing System
. 53:1414-1424.
2024
Growth and Characterization of Seed-Assisted, EDTA-Treated, Chemical Bath-Deposited CdS
. 50:4858-4865.
2021
Sintered Nanocopper Paste for High-Performance 3D Heterogeneous Package Integration
. 49:6737-6745.
2020
Unveiling the Phase Evolution of Sol-Gel Sulfurized Cu2ZnSnS4 Thin Films in ppm-Level H2S: From Binary Sulfides to Quaternary Cu-Zn-Sn-S System
. 50:314-324.
2020
Multilayered Electromagnetic Interference Shielding Structures for Suppressing Magnetic Field Coupling
. 47:5243-5250.
2018
Ultra-High Density, Thin-Film Tantalum Capacitors with Improved Frequency Characteristics for MHz Switching Power Converters
. 47:5632-5639.
2018
Accelerated Metastable Solid–liquid Interdiffusion Bonding with High Thermal Stability and Power Handling
. 47:368-377.
2018
Machine-Learning Approach for Design of Nanomagnetic-Based Antennas
. 46:4963-4975.
2017
Magnetic and Dielectric Property Studies in Fe- and NiFe-Based Polymer Nanocomposites
. 44:3819-3826.
2015
Improved Calculation of the Electronic and Optical Properties of Tetragonal Barium Titanate
. 43:1443-1449.
2014
Cobalt-polymer nanocomposite dielectrics for miniaturized antennas
. 43:1097-1106.
2014
Conductive anodic filament failures in fine-pitch through-via interconnections in organic package substrates
. 42:348-354.
2013
In situ interferometry of MOCVD-grown ZnO for nucleation-layer-based optimization and nanostructure formation monitoring
. 40:453-458.
2011
Metal-organic vapor phase epitaxy growth and characterization of AlN/GaN heterostructures
. 31:395-401.
2002
Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors
. 27:442-445.
1998
Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates
. 26:1-6.
1997
Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCl
4
. 25:449-455.
1996
Mass spectroscopy study of GaN metalorganic chemical vapor deposition
. 25:1554-1560.
1996
Material and electrical characteristics of iron doped Pt-InAlAs Schottky diodes grown by LP-MOCVD
. 25:627-632.
1996
Epitaxial growth of cubic gan on (111) GaAs by metalorganic chemical vapor deposition
. 24:213-218.
1995
Study of grown-in defects and effect of thermal annealing in Al0.3Ga0.7As and GaAs LPE layers
. 11:273-287.
1982
Research
category
ENGINEERING, ELECTRICAL & ELECTRONIC
Category
MATERIALS SCIENCE, MULTIDISCIPLINARY
Category
PHYSICS, APPLIED
Category
Identifiers
International Standard Serial Number (ISSN)
0361-5235
Electronic International Standard Serial Number (EISSN)
1543-186X
Other
journal abbreviation
J ELECTRON MATER