Journal of Electronic Materials

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Journal of Electronic Materials Journal

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Optimization of Pb-free Highly Efficient Cs₂AgInBr₆ Double Perovskite Solar Cells: A Numerical Investigation using SCAPS. 54:4357-4365. 2025
Field Emission Properties of Top-Down GaN Nanowires Characterized in Vacuum by a Nanometer-Resolution Piezoelectric Probing System. 53:1414-1424. 2024
Growth and Characterization of Seed-Assisted, EDTA-Treated, Chemical Bath-Deposited CdS. 50:4858-4865. 2021
Unveiling the Phase Evolution of Sol-Gel Sulfurized Cu₂ZnSnS₄ Thin Films in ppm-Level H₂S: From Binary Sulfides to Quaternary Cu-Zn-Sn-S System. 50:314-324. 2021
Sintered Nanocopper Paste for High-Performance 3D Heterogeneous Package Integration. 49:6737-6745. 2020
Multilayered Electromagnetic Interference Shielding Structures for Suppressing Magnetic Field Coupling. 47:5243-5250. 2018
Ultra-High Density, Thin-Film Tantalum Capacitors with Improved Frequency Characteristics for MHz Switching Power Converters. 47:5632-5639. 2018
Accelerated Metastable Solid-liquid Interdiffusion Bonding with High Thermal Stability and Power Handling. 47:368-377. 2018
Machine-Learning Approach for Design of Nanomagnetic-Based Antennas. 46:4963-4975. 2017
Magnetic and Dielectric Property Studies in Fe- and NiFe-Based Polymer Nanocomposites. 44:3819-3826. 2015
Improved Calculation of the Electronic and Optical Properties of Tetragonal Barium Titanate. 43:1443-1449. 2014
Cobalt-Polymer Nanocomposite Dielectrics for Miniaturized Antennas. 43:1097-1106. 2014
Conductive Anodic Filament Failures in Fine-Pitch Through-Via Interconnections in Organic Package Substrates. 42:348-354. 2013
In situ interferometry of MOCVD-grown ZnO for nucleation-layer-based optimization and nanostructure formation monitoring. 40:453-458. 2011
Metal-organic vapor phase epitaxy growth and characterization of AlN/GaN heterostructures. 31:395-401. 2002
Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors. 27:442-445. 1998
Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates. 26:1-6. 1997
Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCl4. 25:449-455. 1996
Mass spectroscopy study of GaN metalorganic chemical vapor deposition. 25:1554-1560. 1996
Material and electrical characteristics of iron doped Pt-InAlAs Schottky diodes grown by LP-MOCVD. 25:627-632. 1996
Epitaxial growth of cubic gan on (111) GaAs by metalorganic chemical vapor deposition. 24:213-218. 1995
Study of grown-in defects and effect of thermal annealing in Al0.3Ga0.7As and GaAs LPE layers. 11:273-287. 1982

International Standard Serial Number (ISSN)

0361-5235

Electronic International Standard Serial Number (EISSN)

1543-186X